(China (Mainland))
Product Summary
The 2SJ616 is a P-channel silicon MOSFET which can be used in ultrahigh-speed switching applications.
Parametrics
2SJ616 absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: -30 V; (2)Gate-to-Source Voltage VGSS: ±20 V; (3)Drain Current (DC) ID：-6 A; (4)Drain Current (Pulse),PW≤10ms, duty cycle≤1%: -24 A; (5)Allowable Power Dissipation: Mounted on a ceramic board (250mm250.8mm), 1.5 W; (6)Allowable Power Dissipation,Tc=25℃: 3.5 W; (7)Channel Temperature Tch: 150 ℃; (8)Storage Temperature Tstg: -55 to +150℃.
Features
2SJ616 features: (1)Low ON-resistance; (2)Ultrahigh-speed switching; (3)4V drive.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SJ616 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SJ600 |
Other |
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Data Sheet |
Negotiable |
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2SJ601 |
Other |
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Data Sheet |
Negotiable |
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2SJ602 |
Other |
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Data Sheet |
Negotiable |
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2SJ603 |
Other |
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Data Sheet |
Negotiable |
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2SJ604 |
Other |
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Data Sheet |
Negotiable |
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2SJ605 |
Other |
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Data Sheet |
Negotiable |
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