(China (Mainland))
Product Summary
2SK1014 is a N-channel silicon power MOS-FET which belongs to F-II Series. With 500V drain source voltage, the max power dissipation is 125W. The thermal resistance is 35 °C/W at the condition of channel to case, but 1, 0°C/W when the condition is channel to air. It is widely applied in switching regulators, UPS, DC-DC converters and some other general purpose power amplifier.
Parametrics
Absolute Maximum Ratings: (1)Drain-Source-Voltage, Vds: 500 V; (2)Continous Drain Current, Id: 12A; (3)Pulsed Drain Current, Id(puls): 36A; (4)Gate-Source-Voltage, Vgs: ±30 V; (5)Max. Power Dissipation, Pd: 125 W; (5)continuous reverse drain current, Idr: 12A; (7)Operating and Storage Temperature Range, Tch: 150 °C; (8)Operating and Storage Temperature Range, Tstg: -55 ~ +150 °C.
Features
Features:(1)High Speed Switching; (2)Low On-Resistance; (3)No Secondary Breakdown; (4)Low Driving Power; (5)High Voltage; (6)VGS = ± 30V Guarantee; (7) Avalanche Proof.
Diagrams
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