IRF630

N-Channel, enhancement mode, silicon gate power field effect transistors

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Price:: US $0.11~0.21 / piece [Get Latest Price]

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	US $0.11~0.21

PartNumber:: IRF630

Brand:: International Rectifier - IR | Pack: TO | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-03-11

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Part Number:IRF630
US $0.11 - 0.21
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Product Summary

The IRF630 is N-Channel enhancement mode silicon gate power field effect transistors. It is advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412.

Parametrics

Absolute maximum ratings: (1)Drain to Source Voltage, VDSS: 200V; (2)Drain to Gate Voltage (RGS = 20kW), VDGR: 200V ; (3)Continuous Drain Current, ID: 9A; (4)TC = 100℃, ID: 6A; (5)Pulsed Drain Current, IDM: 36A; (6)Gate to Source Voltage, VGS: ±20V; (7)Maximum Power Dissipation, PD: 75W; (8)Linear Derating Factor: 0.6W/℃; (9)Single Pulse Avalanche Energy Rating, EAS: 150mJ; (10)Operating and Storage Temperature, TJ, TSTG: -55 to 150℃; (11)Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s, Tl: 300℃; (12)Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s, Tpkg: 260℃.

Features

Features: (1)9A, 200V; (2)r DS(ON) = 0.400W; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature: TB334, Guidelines for Soldering Surface Mount Components to PC Boards.