Product Summary

The SDP20S30 is a Silicon Carbide Schottky Diode.

Parametrics

SDP20S30 absolute maximum ratings: (1)Continuous forward current, TC=100℃, IF: 10 A; (2)RMS forward current, f=50Hz, IFRMS: 14A; (3)Surge non repetitive forward current, sine halfwave, TC=25℃, t; (4)p=10ms, IFSM: 36A; (5)Repetitive peak forward current, Tj=150℃, TC=100℃, D=0.1, IFRM: 45A; (6)Non repetitive peak forward current, tp=10μs, TC=25℃, IFMAX: 100A; (7)i2t value, TC=25℃, tp=10ms, ∫i2dt: 6.5 A2s; (8)Repetitive peak reverse voltage, VRRM: 300 V; (9)Surge peak reverse voltage, VRSM: 300V; (10)Power dissipation, single diode mode, TC=25℃, Ptot: 65 W; (11)Operating and storage temperature Tj , Tstg: -55 to +175℃.

Features

SDP20S30 features: (1)Revolutionary semiconductor material - Silicon Carbide; (2)Switching behavior benchmark; (3)No reverse recovery; (4)No temperature influence on the switching behavior; (5)No forward recovery.

Diagrams

SDP20S30 circuit diagram

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