Product Summary
The 2SK1007 is a n-channel silicon power mosfet. It is also a low-Power, single-/Dual-level battery monitor with hysteresis and integrated µP reset. Its drain-source breakdown voltage is 450v min at ID=1mA,VGS=0V. There are some typical applications of 2SK1007,such as switching regulators,UFS,DC-DC converters, general purpose power amplifier and so on.
Parametrics
Absolute maximum ratings:(1)drain-source voltage,VDSS:450V; (2)continuous drain current,ID:5A; (3)pulsed drain current,ID(pulse):14A; (4)continuous reverse drain current,IDR:5A; (5)gate-source peak voltage,VGSS:± 30V; (6)max.power dissipation,PD:60W; (7)operating and storage temperature range:Tcb=150℃ ;Tstg=-55 to +150℃.
Features
Features:(1)high speed switching; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high voltage; (6)VGS=± 30v guarantee; (7)avalanch-proof.
Diagrams
2SK1056 |
Other |
Data Sheet |
Negotiable |
|
||||||||
2SK1057 |
Other |
Data Sheet |
Negotiable |
|
||||||||
2SK1058 |
Other |
Data Sheet |
Negotiable |
|
||||||||
2SK1058-E |
MOSFET N-CH 160V 7A TO-3P |
Data Sheet |
|
|
||||||||
2SK1061 |
Other |
Data Sheet |
Negotiable |
|
||||||||
2SK1062 |
Other |
Data Sheet |
Negotiable |
|