(China (Mainland))
Product Summary
The BUZ50A is a SIPMOS power transistor, N channel and enhancement mode. With drain source voltage of 1000V, the continuous drain current is 2.5A at the condition of TC = 25 °C. Inverse diode continuous forward current is up to 2.5A. Inverse diode direct current can be 10A. The package type is TO-220 AB.
Parametrics
Absolute maximum ratings:(1)Drain source voltage, VDS: 1000 V; (2)Drain-gate voltage, RGS = 20 kW, VDGR: 1000A; (3)Continuous drain current, TC = 25 °C, ID: 2.5A; (4)Pulsed drain current, TC = 25 °C, IDpuls: 10A; (5)Gate source voltage, VGS: ± 20 V; (6)Power dissipation, TC = 25 °C, Ptot: 75W; (7)Operating temperature, Tj: -55 to + 150°C; (8)Storage temperature, Tstg: -55 to + 150°C; (9)Thermal resistance, chip case RthJC: ￡ 1.6 K/W; (10)Thermal resistance, chip to ambient RthJA: 75W; (11)DIN humidity category, DIN 40 040: E; (12)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56.
Features
Features:(1)SIPMOS Power Transistor; (2)N channel; (3)Enhancement mode.
Diagrams
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BUZ50A |
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BUZ50B |
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BUZ50C |
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BUZ51 |
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