Product Summary
The STP55NF06 is a Power MOSFET. It is the latest development of STMicroelectronis unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility. The applications of the STP55NF06 include high current, high switching speed, motor control, audio amplifiers, DC-DC & DC-AC converters and automotive anvironment (injection, abs, air-bag, lampdrivers, Etc.)
Parametrics
STP55NF06 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 60 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kΩ): 60 V; (3)VGS, Gate- source Voltage: ± 20 V; (4)ID, Drain Current (continuous) at TC = 25℃: 50A; (5)ID, Drain Current (continuous) at TC = 100℃: 35 A; (6)IDM(·), Drain Current (pulsed): 200 104 A; (7)Ptot, Total Dissipation at TC = 25℃: 110W; (8)Derating Factor: 0.73W/℃; (9)dv/dt, Peak Diode Recovery voltage slope: 7 V/ns; (10)EAS, Single Pulse Avalanche Energy: 350 mJ; (11)Tstg, Storage Temperature: -55 to 175℃; (12)Tj, Operating Junction Temperature: -55 to 175℃.
Features
STP55NF06 features: (1)typical RDS(on) = 0.015Ω; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)application oriented characterization.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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STP55NF06 |
STMicroelectronics |
MOSFET N-Ch 60 Volt 55 Amp |
Data Sheet |
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STP55NF06FP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 55 Amp |
Data Sheet |
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STP55NF06L |
STMicroelectronics |
MOSFET N-Ch 60 Volt 55 Amp |
Data Sheet |
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STP55NF06LFP |
Other |
Data Sheet |
Negotiable |
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